STM32L100R8 datasheet(50/103 Pages) STMICROELECTRONICS

50 / 103 page

Electrical characteristics

STM32L100C6 STM32L100R8/RB

50/103

DocID024295 Rev 5

Table 17. Current consumption in Run mode, code with data processing running from RAM

Symbol

Parameter

Conditions

fHCLK

Typ

Max(1)

Unit

105 °C

IDD (Run

from RAM)

Supply current in

Run mode, code

executed from

RAM, Flash

switched off

fHSE = fHCLK

up to 16 MHz,

included

fHSE = fHCLK/2 above

16 MHz

(PLL ON)(2)

Range 3,

VCORE=1.2 V

VOS[1:0] = 11

1 MHz

200

300

µA

2 MHz

380

500

4 MHz

720

860

Range 2,

VCORE=1.5 V

VOS[1:0] = 10

4 MHz

0.9

8 MHz

1.65

16 MHz

3.2

3.7

Range 1,

VCORE=1.8 V

VOS[1:0] = 01

8 MHz

2.5

16 MHz

4.5

32 MHz

7.7

8.5

HSI clock source

(16 MHz)

Range 2,

VCORE=1.5 V

VOS[1:0] = 10

16 MHz

3.3

3.8

Range 1,

VCORE=1.8 V

VOS[1:0] = 01

32 MHz

7.8

9.2

MSI clock, 65 kHz

Range 3,

VCORE=1.2 V

VOS[1:0] = 11

65 kHz

µA

MSI clock, 524 kHz

524 kHz

110

160

MSI clock, 4.2 MHz

4.2 MHz

700

820

1. Guaranteed by characterization results, unless otherwise specified.

2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).

STM32L100R8 Datasheet(PDF) 50 Page - STMicroelectronics

STM32L100R8 Datasheet(HTML) 50 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL