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STM32L162RC Datasheet(PDF) 72 Page - STMicroelectronics |
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STM32L162RC Datasheet(HTML) 72 Page - STMicroelectronics |
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72 / 123 page ![]() Electrical characteristics STM32L162VC, STM32L162RC 72/123 DocID022881 Rev 10 6.3.7 Internal clock source characteristics The parameters given in Table 31 are derived from tests performed under the conditions summarized in Table 14. High-speed internal (HSI) RC oscillator Low-speed internal (LSI) RC oscillator Table 31. HSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency VDD = 3.0 V - 16 - MHz TRIM (1)(2) 1. The trimming step differs depending on the trimming code. It is usually negative on the codes which are multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0). HSI user-trimmed resolution Trimming code is not a multiple of 16 - ± 0.4 0.7 % Trimming code is a multiple of 16 - - ± 1.5 % ACCHSI(2) 2. Guaranteed by characterization results. Accuracy of the factory-calibrated HSI oscillator VDDA = 3.0 V, TA = 25 °C -1(3) 3. Guaranteed by test in production. -1(3) % VDDA = 3.0 V, TA = 0 to 55 °C -1.5 - 1.5 % VDDA = 3.0 V, TA = -10 to 70 °C -2 - 2 % VDDA = 3.0 V, TA = -10 to 85 °C -2.5 - 2 % VDDA = 3.0 V, TA = -10 to 105 °C -4 - 2 % VDDA = 1.65 V to 3.6 V TA = -40 to 105 °C -4 - 3 % tSU(HSI)(2) HSI oscillator startup time - - 3.7 6 µs IDD(HSI)(2) HSI oscillator power consumption - - 100 140 µA Table 32. LSI oscillator characteristics Symbol Parameter Min Typ Max Unit fLSI(1) 1. Guaranteed by test in production. LSI frequency 26 38 56 kHz DLSI(2) 2. This is a deviation for an individual part, once the initial frequency has been measured. LSI oscillator frequency drift 0°C ≤TA ≤ 105°C -10 - 4 % tsu(LSI)(3) 3. Guaranteed by design. LSI oscillator startup time - - 200 µs IDD(LSI)(3) LSI oscillator power consumption - 400 510 nA |
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