MMDFS3P303

http://onsemi.com

3

Characteristics

Symbol

Min

Typ

Max

Unit

SWITCHING CHARACTERISTICS – continued (Note 7.)

Turn–On Delay Time

td(on)

–

19

–

ns

Rise Time

(VDD = 20 Vdc, ID = 2.0 Adc,

VGS =45Vdc

tr

–

36

–

Turn–Off Delay Time

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(off)

–

27

–

Fall Time

RG 6.0 Ω)

tf

–

31

–

Gate Charge

QT

–

14

25

nC

(VDS = 20 Vdc, ID = 3.5 Adc,

Q1

–

1.8

–

(VDS 20 Vdc, ID 3.5 Adc,

VGS = 10 Vdc)

Q2

–

4.5

–

Q3

–

2.85

–

DRAIN SOURCE DIODE CHARACTERISTICS

Forward On–Voltage (Note 6.)

(IS = 1.7 Adc, VGS = 0 Vdc)

VSD

–

0.9

1.2

V

Reverse Recovery Time

trr

–

26.6

–

ns

(VGS =0V IS =35A

ta

–

18.8

–

(VGS = 0 V, IS = 3.5 A,

dIS/dt = 100 A/

µs)

tb

–

7.8

–

Reverse Recovery Stored

Charge

dIS/dt = 100 A/

µs)

QRR

–

0.03

–

µC

Maximum Instantaneous Forward Voltage (Note 6.)

I

100

Ad

VF

TJ = 25°C

TJ = 125°C

Volts

g(

)

IF = 100 mAdc

IF = 3.0 Adc

IF = 6.0 Adc

0.28

0.42

0.50

0.13

0.33

0.45

Maximum Instantaneous Reverse Current (Note 6.)

V30 V

IR

TJ = 25°C

TJ = 125°C

mA

()

VR = 30 V

250

–

–

25

mA

Maximum Voltage Rate of Change

VR = 30 V

dV/dt

10,000

V/

ms

1. Negative signs for P–Channel device omitted for clarity.

6. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

7. Switching characteristics are independent of operating junction temperature.