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Jun. 2016. Rev. 3.0

1/7

SW4N50K

N-channel Enhanced mode TO-251N/TO-252/TO-220F MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-251N

TO-252

TO-220F

V

DSS

Drain to source voltage

500

V

I

D

Continuous drain current (@T

4*

A

Continuous drain current (@T

2.5*

A

I

DM

Drain current pulsed

(note 1)

16

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

78

mJ

E

AR

Repetitive avalanche energy

(note 1)

10

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

112.6

94.7

19.8

W

0.90

0.76

0.16

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-251N

TO-252

TO-220F

R

thjc

Thermal resistance, Junction to case

1.11

1.32

6.3

R

thja

Thermal resistance, Junction to ambient

88

50

*. Drain current is limited by junction temperature.

BV

I

D

: 4A

R

1. Gate 2. Drain 3. Source

TO-251N

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW N 4N50K

SW4N50K

TO-251N

TUBE

2

SW D 4N50K

SW4N50K

TO-252

REEL

3

SW F 4N50K

SW4N50K

TO-220F

TUBE

1

2

3

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 13nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Charge, Adaptor, LED

General Description

This power MOSFET is produced with advanced super junction technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

TO-252

1

2

3

TO-220F

1

2

3