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S1AF THRU S1MF

Surface Mount General Purpose Silicon Rectifiers

Reverse Voltage - 50 to 1000 V

Forward Current - 1 A

Ratings at 25

ambient temperature unless otherwise specified.

Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.

°C

Maximum DC Blocking Voltage

Peak Forward Surge Current 8.3 ms Single Half

Sine Wave Superimposed on Rated Load

Maximum Instantaneous Forward Voltage at 1 A

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

Operating and Storage Temperature Range

Maximum DC Reverse Current

= 25

°C

at Rated DC Blocking Voltage

=125

°C

（1）

Typical Junction Capacitance

（2）

50

100

200

400

600

800

1000

V

35

70

140

280

420

560

700

V

50

100

200

400

600

800

1000

V

1

30

1.1

5

50

15

80

27

-55 ~ +150

A

A

V

μA

pF

°C

Maximum Ratings and Electrical characteristics

Typical Thermal Resistance

R

θJC

°C/W

T , T

j

stg

Symbols

Units

FEATURES

For surface mounted applications

Low profile package

Glass Passivated Chip Junction

Easy to pick and place

Lead free in comply with EU RoHS 2011/65/EU directives

MECHANICAL DATA

Case: SMAF

Terminals: Solderable per MIL-STD-750, Method 2026

pprox. Weight: 27mg / 0.00095oz

•

•

•

•

•

•

•

• A

PINNING

PIN

1

2

DESCRIPTION

Cathode

Anode

Top View

Marking Code

： S1A-S1M

Simplified outline SMAF and symbol

1

2

S1AF

S1BF

S1DF

S1GF

S1JF

S1KF

S1MF

Measured at 1 MHz and applied reverse voltage of 4 V D.C

（2）

（1）

P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.

Maximum Average Forward Rectified Current

at T = 125

°C

c

Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

2016 Rev 1.0