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Aug. 2016. Rev. 2.0

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SW7960U

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

60

V

I

D

Continuous drain current (@T

8*

A

Continuous drain current (@T

5*

A

I

DM

Drain current pulsed

(note 1)

32

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

588

mJ

E

AR

Repetitive avalanche energy

(note 1)

18

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

1.36

W

0.01

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thja

Thermal resistance, Junction to ambient

92

*. Drain current is limited by junction temperature.

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW HB 7960U

SW7960U

SO-8

REEL

Dual N-channel Enhanced mode SO-8 MOSFET

Features

 High ruggedness

 Low R

(Typ 16m

Ω)@V

 Low Gate Charge (Typ 58nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:DC-DC Converter, Inverter,

Synchronous Rectification

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 8A

R

16m

Ω@V

G1(2)

G2(4)

D1(7,8)

D2(5,6)

S1(1)

S2(3)

SO-8 (Bottom View)

Note: R

efined as the solder mounting surface of the drain pins. R