72425 datasheet(2/3 Pages) VISHAY

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SPICE Device Model SUP80N15-20L

Vishay Siliconix

www.vishay.com

Document Number: 72425

12-Jun-04

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Conditions

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1.7

On-State Drain Current

ID(on)

VDS = 5 V, VGS = 10 V

314

VGS = 10 V, ID = 30 A

0.016

VGS = 10 V, ID = 30 A, TJ = 125°C

0.023

VGS = 10 V, ID = 30 A, TJ = 175°C

0.026

Drain-Source On-State Resistance

rDS(on)

VGS = 4.5 V, ID = 20 A

0.017

Ω

Forward Transconductance

gfs

VDS = 15 V, ID = 30 A

Forward Voltage

VSD

IS = 80 A, VGS = 0 V

0.92

Dynamic

Input Capacitance

Ciss

6590

6500

Output Capacitance

Coss

510

520

Reverse Transfer Capacitance

Crss

VGS = 0 V, VDS = 25 V, f = 1 MHz

320

270

Total Gate Charge

114

110

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS = 50 V, VGS = 10 V, ID = 80 A

Turn-On Delay Time

td(on)

176

Rise Time

100

Turn-Off Delay Time

td(off)

Fall Time

VDD = 50 V, RL = 0.93 Ω

ID ≅ 80 A, VGEN = 10 V, RG = 2.5 Ω

135

Notes

Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

Guaranteed by design, not subject to production testing.

Independent of operating temperature.

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