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BD112 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BD112
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD112 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
BD112
DESCRIPTION
·
Excellent Safe Operating Area
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC = 5A
·
Good Linearity of hFE
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·
Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=75℃
15
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃


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