FMS05P30B datasheet(2/2 Pages) FCI

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ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = -250uA

-30

Drain-Source On-State Resistance

RDS(on)

VGS = -4.5V, ID = -4.2A

56.0

70.0

Drain-Source On-State Resistance

RDS(on)

VGS = -10V, ID = -5.3A

33.0

42.0

Gate Threshold Voltage

VGS(th)

VDS =VGS, ID = -250uA

-1.0

-1.7

-3.0

Zero Gate Voltage Drain Current

IDSS

VDS = -24V, VGS = 0V

-1

Gate Body Leakage

IGSS

VGS = +20V, VDS = 0V

+ 100

Gate Resistance

Forward Transconductance

gfs

VDS = -15V, ID = -5.3A

Dynamic

Total Gate Charge

18.09

Gate-Source Charge

Qgs

6.25

Gate-Drain Charge

Qgd

3.25

Turn-On Delay Time

td(on)

20.52

Turn-On Rise Time

4.43

Turn-Off Delay Time

td(off)

42.81

Turn-Off Fall Time

7.35

Input Capacitance

Ciss

1047.98

Output Capacitance

Coss

172.82

Reverse Transfer Capacitance

Crss

115.50

Source-Drain Diode

Max. Diode Forward Current

-1.9

Diode Forward Voltage

VSD

IS = -5.3A, VGS = 0V

-1.3

Note: Pulse test: pulse width <= 300us, duty cycle<= 2%

August '05 Rev 2

VDS = -15V, VGS = 0V

f = 1.0 MHz

VDD = -15V, RL = 15Ω

D = −1Α, VGEN = -10V

RG = 6Ω

VDS = -15V, ID = -5.3A

VGS = -10V

FMS05P30B 30V P-Channel Enhancement-Mode MOSFET

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