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2SC3502 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

Part # 2SC3502
Description  Silicon NPN transistor in a TO-126F Plastic Package.
PDF  6 Pages
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Manufacturer  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Direct Link  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

2SC3502 Datasheet(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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2SC3502
Rev.E Mar.-2016
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
200
V
Collector to Emitter Voltage
VCEO
200
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current - Continuous
IC
100
mA
Collector Current – Continuous(Pulse)
ICP
200
mA
Collector Power Dissipation
PC
1.2
W
Junction Temperature
Tj
150
℃
Storage Temperature Range
Tstg
-55～150
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Base Breakdown
Voltage
VCBO
IC=10μA
IE=0
200
V
Collector to Emitter Breakdown
Voltage
VCEO
IC=1.0mA
RBE=∞
200
V
Emitter to Base Breakdown Voltage
VEBO
IE=10μA
IC=0
5.0
V
Collector Cut-Off Current
ICBO
VCB=150V
IE=0
0.1
μA
Emitter Cut-Off Current
IEBO
VEB=4.0V
IC=0
0.1
μA
DC Current Gain
hFE
VCE=10V
IC=10mA
40
320
Collector to Emitter Saturation
Voltage
VCE(sat) IC=20mA
IB=2.0mA
0.6
V
Base to Emitter Saturation Voltage
VBE(sat) IC=20mA
IB=2.0mA
1.0
V
Transition Frequency
fT
VCE=30V
IC=10mA
150
MHz
Collector output capacitance
Cob
VCB=30V
f=1.0MHz
2.6
pF
Reverse Transfer Capacitance
Cre
VCB=30V
f=1.0MHz
1.7
pF
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)



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