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ASX501 Datasheet(PDF) 1 Page - Advanced Semiconductor Business Inc. |
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ASX501 Datasheet(HTML) 1 Page - Advanced Semiconductor Business Inc. |
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1 / 15 page ![]() 1/15 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 February 2017 ASX501 250 ~ 2500 MHz MMIC Amplifier (Supply Voltage = Device Voltage, TA = +25 C, Z0 = 50 ) Parameters Units Typical Typical Frequency MHz 900 2000 900 2000 Gain dB 18.0 11.5 18.0 11.5 S11 dB -16 -15 -16 -15 S22 dB -17 -13 -17 -13 Output IP3 dBm 471) 472) 441) 442) Noise Figure dB 4.7 5.0 4.7 5.0 Output P1dB dBm 31.5 31.0 31.5 31 Current mA 560 560 457 457 Device Voltage V +5 +5 +4.7 +4.7 1) OIP3 measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. 2) OIP3 measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. Parameters Units Min Typ Max Testing Frequency MHz 900 Gain dB 18.0 18.0 S11 dB -16 S22 dB -17 Output IP3 dBm 46 47 Noise Figure dB 4.7 4.8 Output P1dB dBm 29.5 31.5 Current mA 520 560 600 Device Voltage V +5 Parameters Rating Operating Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +6 V Operating Junction Temperature +150 C Input RF Power (CW, 50 matched)1) +25 dBm Thermal Resistance 23 C/W 1) Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf Features Description Absolute Maximum Ratings 18dB Gain at 900 MHz 31.5 dBm P1dB at 900 MHz 47 dBm Output IP3 at 900 MHz MTTF > 100 Years Single Supply The ASX501, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems up to 2.5 GHz. The amplifier is available in a SOT89 package and passes through the strin- gent DC, RF, and reliability tests. Application Circuit IF (450 ~ 470 MHz) LTE CDMA GSM PCS WCDMA RFID (908 ~ 923 MHz, balanced) Typical Performance Product Specifications ASX501 Package Style: SOT89 Pin Configuration Pin No. Function 1 RF IN 2 GND 3 RF OUT / Bias |
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