AT41532 datasheet(2/14 Pages) HP

2 / 14 page

AT-41532 Absolute Maximum Ratings

Absolute

Symbol

Parameter

Units

Maximum[1]

VEBO

Emitter-Base Voltage

1.5

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

Collector Current

Power Dissipation[2,3]

225

Junction Temperature

°C

150

TSTG

Storage Temperature

°C

-65 to 150

Electrical Specifications,

TA = 25°C

Symbol

Parameters and Test Conditions

Units

Min

Typ

Max

hFE

Forward Current Transfer Ratio

VCE = 5 V

150

270

IC = 5 mA

ICBO

Collector Cutoff Current

VCB = 3 V

0.2

IEBO

Emitter Cutoff Current

VEB = 1 V

1.0

Thermal Resistance:[2]

jc = 350°C/W

Characterization Information,

TA = 25°C

Symbol

Parameters and Test Conditions

Units

Min

Typ

Noise Figure

f = 0.9 GHz

1.0

f = 1.8 GHz

1.4

VCE = 5 V, IC = 5 mA

f = 2.4 GHz

1.9

Associated Gain

f = 0.9 GHz

15.5

f = 1.8 GHz

10.5

VCE = 5 V, IC = 5 mA

f = 2.4 GHz

9.0

P1dB

Power at 1 dB Gain Compression (opt tuning)

f = 0.9 GHz

dBm

14.5

VCE = 5 V, IC = 25 mA

G1dB

Gain at 1 dB Gain Compression (opt tuning)

f = 0.9 GHz

14.5

VCE = 5 V, IC = 25 mA

IP3

Output Third Order Intercept Point,

f = 0.9 GHz

dBm

VCE = 5 V, IC =25 mA (opt tuning)

|S21E|2

Gain in 50

Ω system; V

CE = 5 V, IC = 5 mA

f = 0.9 GHz

12.5

13.25

f = 2.4 GHz

5.2

注 1：これらのパラメータのいずれかを超

える状態でデバイスを動作させる

と、永久的な損傷を受ける可能性

があります。

注 2：TMOUNTING SURFACE=25℃。

注 3：TC>72℃の場合は、2.86mW/℃の割

合で定格を下げてください。

88759/04-7PM6.0J

2001.04.25, 7:58 PM

Page 2

Adobe PageMaker 6.0J/PPC

AT41532 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard)

AT41532 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard)

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL