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KS03LL4 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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KS03LL4 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 3 page ![]() KS03LL4 20W, 3V Ultra Low Capacitance ESD Protection for High-Speed Interfaces Elektronische Bauelemente 18-May-2016 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit Reverse Working Voltage VRWM - - 3 V Reverse Leakage Current IR VRWM=3V - - 1 µA Reverse Breakdown Voltage VBR IT=1mA 5.3 - 5.9 V Forward Voltage VF IF=10mA - - 0.9 V Clamping Voltage 1 VC IPP=2.5A - - 8 V Junction Capacitance CJ VR=0, f=1MHz - 9 - pF Notes: 1. According to IEC61000-4-5, the waveform of 8/20 µs non-repetitive current pulse decays by exponents. ESD STANDARDS COMPLIANCE |
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