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KSC2328AL Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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KSC2328AL Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Elektronische Bauelemente KSC2328AL 2A , 30V NPN Plastic Encapsulated Transistor 24-Jun-2014 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C E F D B G H J K 3 Base 1 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE Low collector to emitter saturation voltage VCE(sat). Audio power amplifier High Current CLASSIFICATION OF hFE Product-Rank KSC2328AL-O KSC2328AL -Y Range 100~200 160~320 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Continuous Collector Current IC 2 A Collector Power Dissipation PC 0.75 W Thermal Resistance RθJA 167 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 30 - - V IC=100µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=1mA, IC=0 Collector Cut - Off Current ICBO - - 0.1 µA VCB=30V, IE=0 Emitter cut-off current IEBO - - 0.1 µA VEB=5V, IC=0 DC Current Gain hFE 100 - 320 VCE=2V, IC=500mA Collector to Emitter Saturation Voltage VCE(sat) - - 2 V IC=1.5A, IB=30mA Base – Emitter Voltage VBE - - 1 V VCE=2V, IC=500mA Collector Output Capacitance Cob - 30 - pF VCB=10V, IE=0, f=1MHz Transition Frequency fT - 120 - MHz VCE=2V, IC=500mA 1 1 1 1Emitter 2 2 2 2Collector 3 3 3 3Base Millimeter REF. Min. Max. A 4.70 5.10 B 7.80 8.20 C 13.80 14.20 D 3.70 4.10 E 0.35 0.55 F 0.35 0.45 G 1.27 TYP. H 1.28 1.58 J 2.44 2.64 K 0.60 0.80 TO-92L |
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