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MH07N65CT Datasheet(PDF) 2 Page - Chip Integration Technology Corporation

Part # MH07N65CT
Description  650V Silicon N-Channel Power MOSFET
PDF  8 Pages
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Manufacturer  CITC [Chip Integration Technology Corporation]
Direct Link  http://www.citcorp.com.tw/english/index.php
Logo CITC - Chip Integration Technology Corporation

MH07N65CT Datasheet(HTML) 2 Page - Chip Integration Technology Corporation

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2
O
■ Electrical characteristics(T = 25 C unless otherwise specified)
C
PARAMETER
Gate-Source Leakage Current, Forward
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current, Reverse
Static Drain-Source On-Resistance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Continuous Source-Drain Diode Current
Body Diode Voltage
Reverse recovery time
Reverse recovery charge
Turn-off Delay Time
Pulse Diode Forward Current
Bvdss Temperature Coefficient
■ ON Characteristics
PARAMETER
PARAMETER
PARAMETER
■ Dynamic Characteristics
■ Resistive Switching Characteristics
V
= 0V, I = 250µA
G S
D
CONDITIONS
Symbol
V
D S S
I
G S S ( R )
I
D S S
MIN.
650
TYP.
MAX.
UNIT
V
uA
uA
I
G S S ( F )
-10
10
100
1
BV
/ T
D S S
J
0.61
O
V/ C
O
I = 250uA, Reference 25 C
D
V
= 600V, V
= 0V, T = 25°C
D S
G S
a
V
= 480V, V
= 0V, T = 125°C
D S
G S
a
V
= 20V
G S
V
= -20V
G S
V
G S ( t h )
V
2.0
R
D S ( o n )
Ω
0.98
1.4
4.0
V
= V , I = 250µA
D S
G S
D
V
= 10V, I = 3.5A
G S
D
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
g
f s
C
o s s
C
r s s
S
pF
C
i s s
17
100
1072
6.0
V
= 15V, I = 3.5A
D S
D
V
= 25V, V
= 0V, f = 1.0MHz
D S
G S
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Fail Time
ns
tr
td
( O F F )
td
( O N )
37
10
10
I = 7A, V
= 300V, V
= 10V, R = 4.7Ω
D
D D
G S
G
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
nC
Q
g s
Q
g d
Q
g
12
6
28
I = 7A, V
= 300V, V
= 10V
D
D D
G S
tf
13
■ Source-Drain Diode Characteristics
PARAMETER
I
S
ns
Q
r r
I
S M
V
S D
t
r r
1.5
uC
1562
267
28
7
V
A
I = 7.0A, V
= 0V
S
G S
O
I = 7A, T = 25 C, dI /dt = 100A/μs,
S
J
F
V
= 0V
G S
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
■ Thermal characteristics
PARAMETER
Thermal Resistance
Junction to Ambient
CONDITIONS
Symbol
R
θ J C
MIN.
TYP.
MAX.
UNIT
O C/W
R
θ J A
1.25
62
Junction to Case
■ Gate-source Zener Diode
PARAMETER
Gate-Source Breakdown Voltage
CONDITIONS
Symbol
V
G S O
MIN.
TYP.
MAX.
UNIT
V
I
= ±1mA(open Drain)
G S
30
Boby Diode
Boby Diode
MH07N65CT
650V Silicon N-Channel Power MOSFET
Document ID : DS-21M66
Revised Date : 2015/09/16
Revision : C1



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