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MHF12N65CT Datasheet(PDF) 1 Page - Chip Integration Technology Corporation |
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MHF12N65CT Datasheet(HTML) 1 Page - Chip Integration Technology Corporation |
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1 / 11 page ![]() 1 MHF12N65CT Silicon N-Channel Power MOSFET ■ Features ■ Absolute (Tc= 25℃ unless otherwise specified): MHF12N65CT, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. • Fast Switching Low ON Resistance(Rdson≤0.7Ω) • Low Gate Charge (Typical Data: 44nC) • • Low Reverse transfer capacitances(Typical:16pF) 100% Single Pulse avalanche energy Test • ■ Applications • Power switch circuit of adaptor and charger. ■ General Description Document ID : DS-21M64 Revised Date : 2015/09/16 Revision : C1 |
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