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MJU07N60CT Datasheet(PDF) 1 Page - Chip Integration Technology Corporation |
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MJU07N60CT Datasheet(HTML) 1 Page - Chip Integration Technology Corporation |
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1 / 7 page ![]() 1 MJU07N60CT 600V Super Junction Power MOSFET Document ID : DS-22M82 Revised Date : 2015/12/11 Revision : C ■ Pin Description ■ Features High speed power switching • 100% UIS tested, 100% Rg tested • nhanced avalanche ruggedness • Ε Lead free, halogen free • ■ Application • SMPS • Ηard switching and high speed circuit • LED lighting • Flyback O ■ Absolute Maximum Ratings (T = 25 C unless otherwise specified) A PARAMETER Pulsed Drain Current Drain to Source Voltage Gate to Source Voltage CONDITIONS Symbol V D S P D MJU07N60CT ±30 18 UNIT -55 to 150 A W I D M 600 7 A V G S V 1.2 Operating and Storage Temperature E A S 104 mJ Thermal Resistance Junction-Ambient R t h J A O C/W Power Dissipation Continuous Drain Current O T = 25 C C I D Thermal Resistance Junction-case 55 R t h J C O C Chip Integration Technology Corporation ■ Main product characteristics V D S R D S ( o n ) , m a x I D 600V 580mΩ 7A V Avalanche energy, single pulse O L =4.0mH, T =25 C C T , T J S T G 100 O T = 25 C C O C/W TO-251 ■ Absolute Maximum Ratings PARAMETER Symbol UNIT MJU07N60CT |
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