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US4881 Datasheet(PDF) 1 Page - Micro Electronics |
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US4881 Datasheet(HTML) 1 Page - Micro Electronics |
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1 / 6 page ![]() US4881 CMOS Low Voltage High Sensitivity Latch Preliminary Datasheet US4881 CMOS Low Voltage High Sensitivity Latch 3901004881 Rev 1.5 24/July/01 Page 1 Prelimina ry Features and Benefits • Chopper stabilized amplifier stage • Optimized for BDC motor applications • New miniature package / thin, high reliability package • Operation down to 2.2V • CMOS for optimum stability, quality, and cost • Low I DD current Applications • Solid state switch • Brushless DC motor commutation • Speed sensing Ordering Information Part No. Temperature Suffix Package Temperature Range US4881 E SO or UA -40 to 85 oC Extended US4881 L SO or UA -40 to 150 oC Automotive Contact factory or sales representative for legacy temperature code options Functional Diagram Note: Static sensitive device; please observe ESD precautions. Re- verse VDD protection is not included. For reverse voltage protec- tion, a 100 Ω resistor in series with V DD is recommended. Output GND V DD Voltage Regulator Chopper SO Package Pin 1 - VDD Pin 2 - Output Pin 3 - GND UA Package Pin 1 - VDD Pin 2 - GND Pin 3 - Output Description The US4881 is a bipolar Hall effect sensor IC fab- ricated from mixed signal CMOS technology. It incorporates advanced chopper stabilization tech- niques to provide accurate and stable magnetic switch points. There are many applications for this HED in addition to those listed above. The design specifications and performance have been optimized for commutation applications in brush- less DC motors and automotive speed sensing. The output transistor will be latched on (BOP) in the presence of a sufficiently strong South pole magnetic field facing the marked side of the pack- age. Similarly, the output will be latched off (BRP) in the presence of a North field. The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be latched on (BOP) in the presence of a sufficiently strong North pole magnetic field subjected to the marked face. |
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