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JCS1HN60R-O-R-N-B Datasheet(PDF) 1 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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JCS1HN60R-O-R-N-B Datasheet(HTML) 1 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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1 / 14 page  R 版本：201607A 1/13 N 沟道增强型场效应晶体管 N-CHANNEL MOSFET JCS1HN60 订 货 型 号 Order codes 印 记 Marking 封 装 Package 无卤素 Halogen Free 包 装 Packaging 器件重量 Device Weight JCS1HN60T-O-T-N-A JCS1HN60T TO-92 否 NO 编带 Brede 0.216 g(typ) JCS1HN60V-O-V-N-B JCS1HN60V IPAK 否 NO 条管 Tube 0.350 g(typ) JCS1HN60R-O-R-N-B JCS1HN60R DPAK 否 NO 条管 Tube 0.300 g(typ) 封装 Package 主要参数 MAIN CHARACTERISTICS ID 0.5 A TO-92 1.0 A IPAK/DPKA VDSS 600 V Rdson（Vgs=10V） 15 Ω Qg 6.1 nC 用途 高频开关电源 电子镇流器 APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge 产品特性 低栅极电荷 低 C rss (典型值 3.7pF) 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS 产品 FEATURES Low gate charge Low C rss (typical 3.7pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product 订货信息 ORDER MESSAGE |
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