NCE2007N datasheet(2/7 Pages) NCEPOWER

2 / 7 page

Wuxi NCE Power Semiconductor Co., Ltd

Page

v1.0

NCE2007N

Pb Free Product

http://www.ncepower.com

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

Zero Gate Voltage Drain Current

IDSS

VDS=20V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±12V,VDS=0V

±100

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

0.5

0.7

1.2

VGS=4.5V, ID=6A

14.5

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=2.5V, ID=5.5A

mΩ

Forward Transconductance

gFS

VDS=5V,ID=6A

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

900

Output Capacitance

Coss

220

Reverse Transfer Capacitance

Crss

VDS=10V,VGS=0V,

F=1.0MHz

100

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=10V,ID=6A

VGS=4.5V,RGEN=6Ω

Total Gate Charge

Gate-Source Charge

Qgs

2.3

Gate-Drain Charge

Qgd

VDS=10V,ID=6A,

VGS=4.5V

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=6A

1.2

Diode Forward Current

(Note 2)

6.5

Notes:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 .

Guaranteed by design, not subject to production

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