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VCR2N Datasheet(PDF) 1 Page - InterFET Corporation |
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VCR2N Datasheet(HTML) 1 Page - InterFET Corporation |
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1 / 1 page  C-8 01/99 VCR2N, VCR4N, VCR7N N-Channel Silicon Voltage Controlled Resistor JFET ¥ Small Signal Attenuators ¥ Filters ¥ Amplifier Gain Control ¥ Oscillator Amplitude Control Absolute maximum ratings at TA = 25¡C. Reverse Gate Source & Reverse Gate Drain Voltage – 15 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2.4 mW/°C VCR2N & VCR4N TOÐ18 Package See Section G for Outline Dimensions Pin Configuration 1 Source, 2 Drain, 3 Gate & Case VCR7N TOÐ72 Package See Section G for Outline Dimensions Pin Configuration 1 Source, 2 Drain, 3 Gate & Case VCR2N VCR4N At 25°C free air temperature: NJ72 NJ16 Process Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 15 – 15 V IG = – 1 µA, VDS = ØV Gate Reverse Current IGSS – 5 – 0.2 nA VGS = – 15V, VDS = ØV Gate Source Cutoff Voltage VGS(OFF) – 1 – 3.5 – 3.5 – 7 V ID = – 1 µA, VDS = 10V Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 20 60 200 600 Ω VGS = ØV, ID = ØA f = 1 kHz Drain Gate Capacitance Cdg 7.5 3 pF VDG = 10V, IS = ØA f = 1 MHz Source Gate Capacitance Csg 7.5 3 pF VDG = 10V, ID = ØA f = 1 MHz VCR7N At 25°C free air temperature: NJ01 Process Static Electrical Characteristics Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 15 V IG = – 1 µA, VDS = ØV Gate Reverse Current IGSS – 0.1 nA VGS = – 15V, VDS = ØV Gate Source Cutoff Voltage VGS(OFF) – 2.5 – 5 V ID = – 1 µA, VDS = 10V Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 4000 8000 Ω VGS = ØV, ID = ØA f = 1 kHz Drain Gate Capacitance Cdg 1.5 pF VDG = 10V, IS = ØA f = 1 MHz Source Gate Capacitance Csg 1.5 pF VDG = 10V, ID = ØA f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/14/99 11:33 AM Page C-8 |
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