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IF3602

Dual N-Channel Silicon Junction Field-Effect Transistor

Reverse Gate Source Voltage & Gate Drain Voltage

– 20 V

Continuous Forward Gate Current

10 mA

Continuous Device Power Dissipation

300 mW

Power Derating

4 mW/°C

Storage Temperature Range

– 65°C to 200°C

TOÐ78 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Drain, 3 Gate, 4 Omitted,

5 Source, 6 Drain, 7 Gate, 8 Omitted

At 25°C free air temperature:

IF3602

Process NJ3600L

Static Electrical Characteristics

Min

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

– 20

V

Gate Reverse Current

– 0.5

nA

Gate Source Cutoff Voltage

– 0.35

– 3

V

Drain Saturation Current (Pulsed)

30

mA

Dynamic Electrical Characteristics

Typ

Common Source

750

mS

f = 1 kHz

Forward Transconductance

Common Source Input Capacitance

300

pF

f = 1 MHz

Common Source

200

pF

f = 1 MHz

Reverse Transfer Capacitance

Equivalent Short Circuit

0.3

nV/

√Hz V

f = 100 Hz

Input Noise Voltage

Max

Differential Gate Source Voltage

100

mV

¥ Low-Noise, High Gain Amplifier

1000 N. Shiloh Road, Garland, TX 75042

www.interfet.com

Databook.fxp

1/13/99 2:09 PM

Page B-35