TC74ACT245F datasheet(3/11 Pages) TOSHIBA

3 / 11 page

TC51WHM516AXBN65,70

2002-08-22

3/11

ABSOLUTE MAXIMUM RATINGS (See Note 1)

SYMBOL

RATING

VALUE

UNIT

VDD

Power Supply Voltage

−1.0 to 3.6

VIN

Input Voltage

−1.0 to 3.6

VOUT

Output Voltage

−1.0 to 3.6

Topr.

Operating Temperature

−25 to 85

°C

Tstrg.

Storage Temperature

−55 to 150

°C

Tsolder

Soldering Temperature (10 s)

260

°C

Power Dissipation

0.6

IOUT

Short Circuit Output Current

DC RECOMMENDED OPERATING CONDITIONS (Ta

==== −−−−25°C to 85°C)

SYMBOL

PARAMETER

MIN

TYP.

MAX

UNIT

VDD

Power Supply Voltage

2.6

2.75

3.3

VIH

Input High Voltage

2.0



VDD + 0.3*

VIL

Input Low Voltage

−0.3*



0.4

* : VIH(Max) VDD+1.0 V with 10 ns pulse width

VIL(Min) -1.0 V with 10 ns pulse width

DC CHARACTERISTICS (Ta

==== −−−−25°C to 85°C, VDD ==== 2.6 to 3.3 V) (See Note 3 to 4)

SYMBOL

PARAMETER

TEST CONDITION

MIN

TYP.

MAX

UNIT

IIL

Input Leakage Current

VIN = 0 V to VDD

−1.0



+1.0

µA

ILO

Output Leakage Current

Output disable, VOUT = 0 V to VDD

−1.0



+1.0

µA

VOH

Output High Voltage

IOH = − 0.5 mA

2.0



VOL

Output Low Voltage

IOL = 1.0 mA



0.4

IDDO1

Operating Current

CE1

= VIL

CE2

= VIH, IOUT = 0 mA

tRC = min



IDDO2

Page Access Operating Current

CE1

= VIL, CE2 = VIH,

Page add. cycling, IOUT = 0 mA

tPC = min



IDDS

Standby Current(MOS)

CE1

= VDD − 0.2 V, CE2 = VDD − 0.2 V



µA

IDDSD

Deep Power-down Standby Current

CE2

= 0.2 V



µA

CAPACITANCE (Ta

==== 25°C, f ==== 1 MHz)

SYMBOL

PARAMETER

TEST CONDITION

MAX

UNIT

CIN

Input Capacitance

VIN = GND

COUT

Output Capacitance

VOUT = GND

Note: This parameter is sampled periodically and is not 100% tested.

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