| Manufacturer | Part # | Datasheet | Description |
 Jiangsu Changjiang Elec... |
CJU20N06
|
2Mb/5P
|
N-Channel Power MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
CJU20N06
|
2Mb/5P
|
N-Channel MOSFET uses advanced trench technology
|
| Search Partnumber :
Start with "CJU20N06" -
Total : 49 ( 1/3 Page) |
 ZP Semiconductor |
CJU01N60
|
451Kb/2P |
Plastic-Encapsulate MOSFETS
|
 SHENZHEN DOINGTER SEMIC... |
CJU01N60
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
 ZP Semiconductor |
CJU01N65B
|
695Kb/3P |
Plastic-Encapsulate MOSFETS
|
|
CJU01N80
|
546Kb/2P |
Plastic-Encapsulate MOSFETS
|
 Jiangsu Changjiang Elec... |
CJU01N80
|
796Kb/5P |
N-Channel Power MOSFET
|
 ZP Semiconductor |
CJU02N60
|
938Kb/3P |
Plastic-Encapsulate MOSFETS
|
 SHENZHEN DOINGTER SEMIC... |
CJU02N60
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
 ZP Semiconductor |
CJU02N65
|
706Kb/3P |
Plastic-Encapsulate MOSFETS
|
|
CJU02N80
|
691Kb/3P |
Plastic-Encapsulate MOSFETS
|
 SHENZHEN DOINGTER SEMIC... |
CJU02N80
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
 List of Unclassifed Man... |
CJU03N25
|
762Kb/4P |
POWER FIELD EFFECT TRANSISTOR
|
 ZP Semiconductor |
CJU03N80
|
379Kb/2P |
Plastic-Encapsulate MOSFETS
|
|
CJU04N60
|
865Kb/3P |
Plastic-Encapsulate MOSFETS
|
|
CJU04N60A
|
568Kb/2P |
Plastic-Encapsulate MOSFETS
|
 Jiangsu Changjiang Elec... |
CJU04N60A
|
1Mb/5P |
N-Channel Power MOSFET
|
 ZP Semiconductor |
CJU04N65
|
711Kb/3P |
Plastic-Encapsulate MOSFETS
|
 SHENZHEN DOINGTER SEMIC... |
CJU04N65
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
 ZP Semiconductor |
CJU04N65A
|
503Kb/2P |
Plastic-Encapsulate MOSFETS
|