| Manufacturer | Part # | Datasheet | Description |
 Cree, Inc |
GTVA262701FA-V2-R0
|
489Kb/8P
|
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
|
 WOLFSPEED, INC. |
GTVA262701FA-V2-R0
|
506Kb/8P
|
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz
Rev. 04.3, 2022-1-27
|
| Search Partnumber :
Start with "GTVA262701FA-V2-R0" -
Total : 27 ( 1/2 Page) |
 WOLFSPEED, INC. |
GTVA262701FA-V2-R2
|
506Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz
Rev. 04.3, 2022-1-27 |
 Cree, Inc |
GTVA262701FA-V2-R2
|
489Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
|
 WOLFSPEED, INC. |
GTVA262701FA_V2
|
506Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz
Rev. 04.3, 2022-1-27 |
|
GTVA262701FA
|
506Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz
Rev. 04.3, 2022-1-27 |
 Cree, Inc |
GTVA262701FA
|
489Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
|
 WOLFSPEED, INC. |
GTVA262711FA
|
594Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 – 2690 MHz
Rev. 04.4, 2022-1-27 |
 Cree, Inc |
GTVA262711FA
|
464Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz
|
 WOLFSPEED, INC. |
GTVA262711FA-V2-R0
|
594Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 – 2690 MHz
Rev. 04.4, 2022-1-27 |
 Cree, Inc |
GTVA262711FA-V2-R0
|
464Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz
|
 WOLFSPEED, INC. |
GTVA262711FA-V2-R2
|
594Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 – 2690 MHz
Rev. 04.4, 2022-1-27 |
 Cree, Inc |
GTVA262711FA-V2-R2
|
464Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz
|
 Infineon Technologies A... |
GTVA261701FA
|
858Kb/4P |
Thermally-Enhanced High Power RF GaN HEMT
Rev. 01, 2015-05-29 |
 Cree, Inc |
GTVA261701FA
|
591Kb/10P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 ??2690 MHz
|
 WOLFSPEED, INC. |
GTVA261701FA
|
750Kb/10P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz
Rev. 05.1, 2022-1-27 |
|
GTVA261701FA-V1
|
750Kb/10P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz
Rev. 05.1, 2022-1-27 |
|
GTVA261701FA-V1-R0
|
750Kb/10P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz
Rev. 05.1, 2022-1-27 |
|
GTVA261701FA-V1-R2
|
750Kb/10P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz
Rev. 05.1, 2022-1-27 |
 Infineon Technologies A... |
GTVA261701FA
|
858Kb/4P |
Thermally-Enhanced High Power RF GaN HEMT
Rev. 01, 2015-05-29 |