| Manufacturer | Part # | Datasheet | Description |
 Unisonic Technologies |
BAS70G-AE3-R
|
215Kb/4P |
SCHOTTKY BARRIER DIODES
|
|
BAV70G-AE3-R
|
138Kb/2P |
DUAL SURFACE MOUNT SWITCHING DIODE
|
|
BAV70G-AE3-R
|
128Kb/3P |
DUAL SURFACE MOUNT SWITCHING DIODE
|
|
UJ0100G-AE3-R
|
189Kb/3P |
LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS
|
|
UT2340G-AE3-R
|
310Kb/5P |
P-CHANNEL ENHANCEMENT MODE
|
|
UT2340G-AE3-R
|
309Kb/5P |
P-CHANNEL ENHANCEMENT MOSFET
|
 VBsemi Electronics Co.,... |
UT2340G-AE3-R
|
472Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
 Unisonic Technologies |
UT3400G-AE3-R
|
156Kb/3P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
 VBsemi Electronics Co.,... |
UT3400G-AE3-R
|
492Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
 Unisonic Technologies |
UT3N10G-AE3-R
|
211Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|