| Manufacturer | Part # | Datasheet | Description |
Unisonic Technologies |
2SK3666G-AE3-R
|
150Kb/4P |
N-CHANNEL JUNCTIN SILICON FET
|
|
BAW56G-AE3-R
|
123Kb/3P |
DUAL SURFACE MOUNT SWITCHING DIODE
|
|
MMBT3906G-AE3-R
|
140Kb/3P |
GENERAL PURPOSE APPLIATION
|
|
MMBTA06G-AE3-R
|
217Kb/5P |
AMPLIFIER TRANSISTOR
|
|
MMBTA56G-AE3-R
|
227Kb/5P |
AMPLIFIER TRANSISTOR
|
|
SK1816G-AE3-R
|
289Kb/8P |
BIPOLAR LATCH TYPE HALL EFFECT FOR HIGH-TEMPERATURE OPERATION
|
|
SK1816G-AE3-R
|
278Kb/8P |
BIPOLAR LATCH TYPE HALL EFFECT
|
|
SK1816G-AE3-R
|
239Kb/6P |
BIPOLAR LATCH TYPE HALL EFFECT FOR HIGH-TEMPERATURE OPERATION
|
|
SK1826G-AE3-R
|
193Kb/5P |
BIPOLAR LATCH TYPE HALL EFFECT FOR HIGH-TEMPERATURE OPERATION
|
TECH PUBLIC Electronics... |
TPUT3N06G-AE3-R
|
2Mb/6P |
60V N-Channel MOSFET
|
Unisonic Technologies |
UP1496G-AE3-R
|
116Kb/3P |
PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
|
|
UP1496G-AE3-R
|
116Kb/3P |
PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
|
|
UT2306G-AE3-R
|
258Kb/5P |
N-CHANNEL ENHANCEMENT MODE
|
|
UT2306G-AE3-R
|
242Kb/5P |
N-CHANNEL ENHANCEMENT MODE
|
|
UT2306G-AE3-R
|
267Kb/5P |
N-CHANNEL ENHANCEMENT MODE
|
VBsemi Electronics Co.,... |
UT2306G-AE3-R
|
492Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
Unisonic Technologies |
UT2316G-AE3-R
|
204Kb/4P |
N-CHANNEL ENHANCEMENT MODE
|
|
UT2316G-AE3-R
|
181Kb/4P |
N-CHANNEL ENHANCEMENT MODE
|
VBsemi Electronics Co.,... |
UT2316G-AE3-R
|
492Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
Unisonic Technologies |
UT2P06G-AE3-R
|
217Kb/3P |
P-CHANNEL POWER MOSFET
|
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