| Manufacturer | Part # | Datasheet | Description |
 Unisonic Technologies |
BAV199L-AE3-R
|
119Kb/2P |
DUAL SURFACE MOUNT LOW LEAKAGE DIODE
|
|
BAV99L-AE3-R
|
98Kb/4P |
HIGH CONDUCTANCE ULTRA FAST DIODE
|
|
BAV99L-AE3-R
|
187Kb/4P |
HIGH CONDUCTANCE ULTRA FAST DIODE
|
|
SK8509L-AE3-R
|
247Kb/6P |
HALL-EFFECT SENSOR IC
|
|
SK8509L-AE3-R
|
272Kb/6P |
HALL-EFFECT SENSOR IC
|
|
SK8509L-AE3-R
|
231Kb/6P |
HALL-EFFECT SENSOR IC
|
|
UT2309L-AE3-R
|
224Kb/4P |
P-CHANNEL ENHANCEMENT MODE
|
 VBsemi Electronics Co.,... |
UT2309L-AE3-R
|
502Kb/9P |
P-Channel 30 V (D-S) MOSFET
|
 Unisonic Technologies |
UT3409L-AE3-R
|
202Kb/4P |
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
 VBsemi Electronics Co.,... |
UT3409L-AE3-R
|
472Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
 Unisonic Technologies |
UT3419L-AE3-R
|
145Kb/3P |
20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
|
ZD3.9L-AE3-R
|
117Kb/3P |
ZENER DIODE
|