| Manufacturer | Part # | Datasheet | Description |
 Polyfet RF Devices |
LP821
|
35Kb/2P |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
 Leshan Radio Company |
LP8217DT1AG
|
220Kb/3P |
20V P-Channel (D-S) MOSFET
|
 Cornell Dubilier Electr... |
LP821M063A1P3
|
167Kb/3P |
105 ?C Snap-In Aluminum Electrolytic Capacitors
|
|
LP821M063A1P3
|
355Kb/4P |
Stable ESR, Long Life, Snap-In
|
|
LP821M100E1P3
|
167Kb/3P |
105 ?C Snap-In Aluminum Electrolytic Capacitors
|
|
LP821M100E1P3
|
355Kb/4P |
Stable ESR, Long Life, Snap-In
|
|
LP821M200H3P3
|
167Kb/3P |
105 ?C Snap-In Aluminum Electrolytic Capacitors
|
|
LP821M200H3P3
|
355Kb/4P |
Stable ESR, Long Life, Snap-In
|
|
LP821M200H7P3
|
167Kb/3P |
105 ?C Snap-In Aluminum Electrolytic Capacitors
|
|
LP821M200H7P3
|
355Kb/4P |
Stable ESR, Long Life, Snap-In
|
|
LP821M250H7P3
|
167Kb/3P |
105 ?C Snap-In Aluminum Electrolytic Capacitors
|
|
LP821M250H7P3
|
355Kb/4P |
Stable ESR, Long Life, Snap-In
|
 Polyfet RF Devices |
LP821
|
61Kb/2P |
RF POWER LDMOS TRANSISTOR
|