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BYVF32 Datasheet (PDF) - Vishay Siliconix

BYVF32 Datasheet PDF - Vishay Siliconix
Part # BYVF32
Download  BYVF32 Download
File Size   85.39 Kbytes
Page   3 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description Dual Ultrafast Rectifiers

BYVF32 Datasheet (PDF)

Go To PDF Page Download Datasheet
BYVF32 Datasheet PDF - Vishay Siliconix

Part # BYVF32
Download  BYVF32 Click to download

File Size   85.39 Kbytes
Page   3 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description Dual Ultrafast Rectifiers

BYVF32 Datasheet (HTML) - Vishay Siliconix


BYVF32 Product details

Features
• Plastic package has Underwriters Laboratory Flammability Classification 94V-0
• Dual rectifier construction, positive centertap
• Glass passivated chip junctions
• Low power loss
• Low forward voltage, high current capability
• High surge current capability
• Superfast recovery times for high efficiency




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About Vishay Siliconix


Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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