Description
The NCE8295AI uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. This device is
suitable for use in PWM, load switching and general purpose
applications. General Features
● VDS =82V,ID =95A
RDS(ON) < 8.0 mΩ @ VGS=10V (Typ:6.6mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Special designed for convertors and power controls
● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard switched and High frequency circuits
● Uninterruptible power supply