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NCE8295AI Datasheet(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE8295AI Datasheet(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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1 / 7 page  Wuxi NCE Power Co., Ltd Page V1.0 1 NCE8295AI Pb Free Product http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON) < 8.0 mΩ @ VGS=10V (Typ:6.6mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Special designed for convertors and power controls ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and High frequency circuits ● Uninterruptible power supply 100% UIS TESTED! 100% ΔVds TESTED! Schematic diagram Marking and pin assignment TO-251 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE8295AI NCE8295AI TO-251-3L - - - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 82 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 95 A Drain Current-Continuous(TC=100℃) ID (100℃) 67 A Pulsed Drain Current IDM 320 A Maximum Power Dissipation PD 170 W Derating factor 1.13 W/℃ Single pulse avalanche energy (Note 5) EAS 529 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 0.88 ℃ /W |
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