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BT151-500R Datasheet (PDF) - NXP Semiconductors
BT151-500R Datasheet PDF - NXP Semiconductors
Part # BT151-500R
Download  BT151-500R Download
File Size   161.17 Kbytes
Page   11 Pages
Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors
Description SCR, 12 A, 15mA, 500 V, SOT78

BT151-500R Datasheet (PDF)

Go To PDF Page Download Datasheet
BT151-500R Datasheet PDF - NXP Semiconductors

Part # BT151-500R
Download  BT151-500R Click to download

File Size   161.17 Kbytes
Page   11 Pages
Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors
Description SCR, 12 A, 15mA, 500 V, SOT78

BT151-500R Datasheet (HTML) - NXP Semiconductors


BT151-500R Product details

General description

Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.



Features and benefits

High reliability

High surge current capability

High thermal cycling performance




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About NXP Semiconductors

NXP Semiconductors is a publicly traded multinational company that designs, develops, and manufactures a wide range of semiconductors and integrated circuits for various applications, including automotive, industrial, communications, and consumer markets.

The company was founded in 2006 and is headquartered in Eindhoven, Netherlands.

NXP offers a broad portfolio of products, including microcontrollers, microprocessors, secure authentication ICs, power management ICs, RF and microwave components, and sensor solutions, among others.

The company's products are designed to be energy efficient, secure, and reliable, and are used in a variety of applications, including automotive systems, industrial automation and control, smart homes and buildings, and connected devices.

NXP is dedicated to innovation and customer satisfaction, and is committed to providing its customers with the best semiconductor solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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