AP3P2R2CDT datasheet(4/6 Pages) A-POWER

4 / 6 page

AP3P2R2CDT

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

2.01E+09

Fig 11. Transfer Characteristics

Fig 12. Drain Current v.s. Case Temperature

120

160

200

240

Q G , Total Gate Charge (nC)

I D = -20 A

V DS = -15V

4000

8000

12000

16000

20000

24000

-V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + Tc

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.1

100

1000

0.01

0.1

100

-V DS , Drain-to-Source Voltage (V)

T C =25

o C

Single Pulse

10us

100us

1ms

10ms

Operation in this area

limited by RDS(ON)

120

160

200

240

100

125

150

T C , Case Temperature (

o C )

Limited by package

120

160

200

-V GS , Gate-to-Source Voltage (V)

T j =150

o C

T j =25

o C

V DS =-5V

T j = -55

o C

AP3P2R2CDT Datasheet(PDF) 4 Page - Advanced Power Electronics Corp.

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