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AP3P2R2CDT Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP3P2R2CDT Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
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1 / 6 page  Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -30V ▼ 100% R g & UIS Test RDS(ON) 2.2mΩ ▼ Ultra Low On-resistance ID 4 -205A ▼ RoHS Compliant & Halogen-Free Description Absolute Maximum Ratings@Tj=25 oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy 5 mJ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 0.9 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 25 ℃/W Data and specifications subject to change without notice Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range 5 -55 to 150 Total Power Dissipation 138.8 245 -30 +20 -39.2 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current 3, V GS @ 10V Drain Current (Chip), VGS @ 10V 4 -205 AP3P2R2CDT Rating Halogen-Free Product 201508241 1 -55 to 150 Drain Current 3, V GS @ 10V -31.4 Pulsed Drain Current 1 -200 AP3P2R2 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PDFN 5x6 package used advanced package and silicon combination for ultra low on-resistance and high efficiency, special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. G D S Bottom View Top View S S S G DD D D PDFN 5x6 . |
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