MCP6S21 datasheet(3/43 Pages) MICROCHIP

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 2003 Microchip Technology Inc.

DS21117A-page 3

MCP6S21/2/6/8

Power Supply

Supply Voltage

VDD

2.5

—

5.5

Quiescent Current

0.5

1.0

1.35

IO = 0 (Note 2)

Quiescent Current, Shutdown

mode

IQ_SHDN

—0.5

1.0

µA

IO = 0 (Note 2)

Power-On Reset

POR Trip Voltage

VPOR

1.2

1.7

2.2

(Note 3)

POR Trip Voltage Drift

∆VPOR/∆T—

-3.0

—

mV/°C

TA = -40°C to+85°C

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, TA =+25°C, VDD = +2.5V to +5.5V, VSS = GND, VREF = VSS, G = +1 V/V,

Input = CH0 = (0.3V)/G, CH1 to CH7 = 0.3V, RL =10 kΩ to VDD/2, SI and SCK are tied low and CS is tied high.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Note 1: RLAD (RF + RG in Figure 4-1) connects VREF, VOUT and the inverting input of the internal amplifier. The MCP6S22 has

VREF tied internally to VSS, so VSS is coupled to the internal amplifier and the PSRR spec describes PSRR+ only. We

recommend the MCP6S22’s VSS pin be tied directly to ground to avoid noise problems.

2: IQ includes current in RLAD (typically 60 µA at VOUT = 0.3V). Both IQ and IQ_SHDN exclude digital switching currents.

3: The output goes Hi-Z and the registers reset to their defaults; see Section 5.4, “Power-On Reset”.

AC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, TA =+25°C, VDD = +2.5V to +5.5V, VSS = GND, VREF = VSS, G = +1 V/V,

Input = CH0 =(0.3V)/G, CH1 to CH7=0.3V, RL =10 kΩ to VDD/2, CL = 60 pF, SI and SCK are tied low, and CS is tied high.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Frequency Response

-3 dB Bandwidth

—

2 to 12

—

MHz

All gains; VOUT < 100 mVP-P (Note 1)

Gain Peaking

GPK

—

All gains; VOUT < 100 mVP-P

Total Harmonic Distortion plus Noise

f = 1 kHz, G = +1 V/V

THD+N

—

0.0015

—

VOUT = 1.5V ± 1.0VPK, VDD = 5.0V,

BW = 22 kHz

f = 1 kHz, G = +4 V/V

THD+N

—

0.0058

—

VOUT = 1.5V ± 1.0VPK, VDD = 5.0V,

BW = 22 kHz

f = 1 kHz, G = +16 V/V

THD+N

—

0.023

—

VOUT = 1.5V ± 1.0VPK, VDD = 5.0V,

BW = 22 kHz

f = 20 kHz, G = +1 V/V

THD+N

—

0.0035

—

VOUT = 1.5V ± 1.0VPK, VDD = 5.0V,

BW = 80 kHz

f = 20 kHz, G = +4 V/V

THD+N

—

0.0093

—

VOUT = 1.5V ± 1.0VPK, VDD = 5.0V,

BW = 80 kHz

f = 20 kHz, G = +16 V/V

THD+N

—

0.036

—

VOUT = 1.5V ± 1.0VPK, VDD = 5.0V,

BW = 80 kHz

Step Response

Slew Rate

—

4.0

—

V/µs

G = 1, 2

—

V/µs

G = 4, 5, 8, 10

—22

—

V/µs

G = 16, 32

Noise

Input Noise Voltage

Eni

—3.2

—

µVP-P f = 0.1 Hz to 10 kHz (Note 2)

—

f = 0.1 Hz to 200 kHz (Note 2)

Input Noise Voltage Density

eni

—10

—

nV/

√Hz f = 10 kHz (Note 2)

Input Noise Current Density

ini

—4

—

fA/

√Hz f = 10 kHz

Note 1: See Table 4-1 for a list of typical numbers.

2: Eni and eni include ladder resistance noise. See Figure 2-33 for eni vs. G data.

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