K6R1016C1C-C/C-L, K6R1016C1C-I/C-P

CMOS SRAM

Revision 4.0

- 1 -

September 2001

Document Title

64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).

Operated at Commercial and Industrial Temperature Ranges.

Revision History

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,

please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev.No.

Rev. 0.0

Rev. 1.0

Rev. 2.0

Rev. 2.1

Rev. 2.2

Rev. 3.0

Rev. 3.1

Rev. 4.0

Remark

Preliminary

Preliminary

Preliminary

Final

Final

Final

Final

Final

History

Initial release with preliminary.

Relax DC characteristics.

Add 48-fine pitch BGA.

Changed device part name for FP-BGA.

ex) K6R1016C1C-Z -> K6R1016C1C-F

Changed device ball name for FP-BGA.

Added Data Retention Characteristics.

Add 10ns part.

Delete 20ns speed bin

Item

Previous

Changed

12ns

90mA

95mA

15ns

88mA

93mA

20ns

85mA

90mA

Item

Previous

Changed

Symbol

Z

F

Previous

Changed

I/O1 ~ I/O8

I/O9 ~ I/O16

I/O9 ~ I/O16

I/O1 ~ I/O8

Draft Data

Aug. 5. 1998

Sep. 7. 1998

Sep. 17. 1998

Nov. 5. 1998

Dec. 10. 1998

Mar. 3. 1999

Mar. 3. 2000

Sep.24. 2001