PKCP4EB datasheet(1/6 Pages) NIKOSEM

Part #	PKCP4EB

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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1 / 6 page

REV1.1

1

J-2-2

N-Channel Enhancement Mode

Field Effect Transistor

PKCP4EB

PDFN 5x6P

Halogen-Free & Lead-Free

NIKO-SEM

G

D

S

#1

100% UIS Tested

100% Rg Tested

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R

DS(on) to Minimize Conduction Losses.

• Ohmic Region Good R

DS(on) Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

• Products Integrated ESD diode with ESD Protected.

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

±12

V

Continuous Drain Current

4

TC = 25 °C

ID

240

A

TC = 100 °C

151

Pulsed Drain Current

1

IDM

350

Continuous Drain Current

TA = 25 °C

ID

53

TA = 70 °C

42

Avalanche Current

IAS

74

Avalanche Energy

L = 0.1mH

EAS

273

mJ

Power Dissipation

TC = 25 °C

PD

83

W

TC = 100 °C

33

Power Dissipation

3

TA = 25 °C

PD

4.1

W

TA = 70 °C

2.6

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

G. GATE

D. DRAIN

S. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

20V

0.85mΩ

240A

ESD Protected Gate

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PKCP4EB Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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