PKCP4EB datasheet(2/6 Pages) NIKOSEM

2 / 6 page

REV1.1

J-2-2

N-Channel Enhancement Mode

Field Effect Transistor

PKCP4EB

PDFN 5x6P

Halogen-Free & Lead-Free

NIKO-SEM

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

t ≦10s

RJA

°C / W

Junction-to-Ambient

Steady-State

RJA

Junction-to-Case

Steady-State

RJC

1.5

1Pulse width limited by maximum junction temperature.

2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C.

3The Power dissipation is based on R

JA t ≦10s value.

4The maximum current rating is package limited.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

0.6

0.75

1.2

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±10V

±30

A

Zero Gate Voltage Drain Current

IDSS

VDS = 16V, VGS = 0V

A

VDS = 10V, VGS = 0V, TJ = 55 °C

Drain-Source On-State

Resistance

RDS(ON)

VGS = 2.5V, ID = 10A

1.28

2.3

mΩ

VGS = 4.5V, ID = 10A

0.81

1.3

VGS = 10V, ID = 15A

0.65

0.85

Forward Transconductance

gfs

VDS = 5V, ID = 15A

145

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 10V, f = 1MHz

5875

Output Capacitance

Coss

1164

Reverse Transfer Capacitance

Crss

1031

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

0.9

Total Gate Charge

VGS = 10V

VDS = 10V , VGS = 10V,

ID = 15A

168

VGS = 4.5V

Gate-Source Charge

Qgs

5.8

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDS = 10V ,

ID  15A, VGS = 10V, RGEN =6Ω

Rise Time

114

Turn-Off Delay Time

td(off)

295

Fall Time

175

PKCP4EB Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

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