EMF09P02CS datasheet(2/5 Pages) EXCELLIANCE

2 / 5 page

2016/3/11

p.2

EMF09P02CS

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP

MAX

STATIC

Drain‐Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = ‐250A

‐20

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = ‐250A

‐0.4 ‐0.75

‐1.2

Gate‐Body Leakage

IGSS

VDS = 0V, VGS = ±8V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = ‐16V, VGS = 0V

‐1

A

VDS = ‐12V, VGS = 0V, TJ = 125 °C

‐10

On‐State Drain Current

ID(ON)

VDS = ‐5V, VGS = ‐4.5V ‐56

Drain‐Source On‐State Resistance

RDS(ON)

VGS = ‐4.5V, ID = ‐24A

7.2

mΩ

VGS = ‐2.5V, ID = ‐15A

9.6

12.5

VGS = ‐1.8V, ID = ‐5A

14.5

Forward Transconductance

gfs

VDS = ‐5V, ID = ‐24A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = ‐10V, f = 1MHz

7660

Output Capacitance

Coss

596

Reverse Transfer Capacitance

Crss

510

Gate Resistance

VGS = 15mV, VDS = 0V, f = 1MHz

3.0

Total Gate Charge

1,2

Qg(VGS=‐4.5V)

VDS = ‐10V, VGS = ‐4.5V,

ID = ‐24A

Qg(VGS=‐2.5V)

Gate‐Source Charge

1,2

Qgs

4.9

Gate‐Drain Charge

1,2

Qgd

Turn‐On Delay Time

1,2

td(on)

Rise Time

1,2

VDS = ‐10V,

Turn‐Off Delay Time

1,2

td(off)

ID = ‐1A, VGS = ‐4.5V, RGS = 6Ω

150

Fall Time

1,2

SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

‐56

Pulsed Current

ISM

‐150

Forward Voltage

VSD

IF = ‐24A, VGS = 0V

‐1.2

1Pulse test : Pulse Width  300 sec, Duty Cycle  2％.

2Independent of operating temperature.

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