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EMF09P02CS Datasheet(PDF) 5 Page - Excelliance MOS Corp.

Part # EMF09P02CS
Description  P?륝hannel Logic Level Enhancement Mode Field Effect Transistor
PDF  5 Pages
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Manufacturer  EXCELLIANCE [Excelliance MOS Corp.]
Direct Link  http://www.excelliancemos.com/
Logo EXCELLIANCE - Excelliance MOS Corp.

EMF09P02CS Datasheet(HTML) 5 Page - Excelliance MOS Corp.

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2016/3/11 
p.5 
EMF09P02CS
DS
V     = ‐ 5V
Q   ‐ Gate Charge( nC )
0
0
1
2
g
15
30
I   = ‐ 24A
3
4
5
D
60
45
75
‐ 10V
Gate Charge Characteristics
‐ V   , Drain‐Source Voltage( V )
Capacitance Characteristics
6000
0
0
2000
4000
Crss
DS
5
Coss
8000
10000
12000
10
15
20
Ciss
f =1MHz
VGS=0 V
Maximum Safe Operating Area
JC
Tc = 25 C
R    = 2.5 C/W
SINGLE PULSE
GS
V   = ‐4.5V
0.5
0.5
1
θ
°
1
DS
°
R  
    
 Li
mi
t
10
100
300
ds
(on
)
DC
10
100
100  s
10  s
100m
s
10ms
1ms
μ
μ
‐V   ,Drain‐Source Voltage( V )
0.5
0.3
0.2
0.05
0.03
0.02
Notes:
C
θ
JC
θ
JC
100
1000
J
10
1
1
DM
1.Duty Cycle,D =
2.R     =2.5°C/W
θ
JC
3.T  ‐  T   = P * R     (t)
4.R    (t)=r(t) * R
θ
JC
1
0.2
0.05
0.1
0.1
Duty Cycle = 0.5
0.01
Single Pulse
‐2
10
0.02
0.01
10
Transient Thermal Response Curve
t  ,Time ( mSEC )
‐1
t1
t2
SINGLE PULSE TIME ( mSEC ) 
SINGLE PULSE MAXIMUM POWER DISSIPATION
0.01
0
1000
500
0.1
1
2500
1500
2000
3000
10
100
1000
R    = 2.5 C/W
SINGLE PULSE
C
°
T  = 25 C
θJC
°
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 



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