GTVA262711FA-V2-R0 datasheet(1/9 Pages) CREE

Part #	GTVA262711FA-V2-R0

Description	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz

PDF	9 Pages

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Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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1 / 9 page

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 04.2, 2019-01-07

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Thermally-Enhanced High Power RF GaN on SiC HEMT

300 W, 48 V, 2620 – 2690 MHz

Features

• GaNonSiCHEMTtechnology

• Inputmatched

• TypicalpulsedCWperformance:10µspulsewidth,

10%dutycycle,2690MHz,48V

-OutputpoweratP3dB=300W

-Efficiency=62%

-Gain=19.1dB

• HumanBodyModelClass1B(perANSI/ESDA/

JEDECJS-001)

• Capableofhandling10:1VSWR@48V,70W(CW)

outputpower

• Pb-freeandRoHS-compliant

Description

TheGTVA262711FAisa300-watt(P3dB)GaNonSiChighelectron

mobility transistor (HEMT) for use in multi-standard cellular power

amplifierapplications.Itfeaturesinputmatching,highefficiency,and

athermally-enhancedpackagewithearlessflange.

RF Characteristics

Single-carrier WCDMA Specifications (testedinWolfspeedproductiontestfixture)

VDD=48V,IDQ=320mA,POUT=70Wavg,ƒ=2690MHz.3GPPWDMAsignal,3.84MHzchannelbandwidth,

peak/average=10dB@0.01%CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

16

18

–

dB

DrainEfficiency

hD

38

38.5

–

%

AdjacentChannelPowerRatio

ACPR

–

–27.5

–25

dBc

OutputPAR@0.01%CCDF

OPAR

5.7

6.3

—

dB

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ = 320 mA, ƒ = 2690 MHz

3GPP WCDMA signal, 10 dB PAR

3.84 MHz bandwidth

Gain

Efficiency

PAR @ 0.01% CCDF

g262711fa-gr1a

GTVA262711FA

PackageH-87265J-2

GTVA262711FA

Similar Part No. - GTVA262711FA-V2-R0

Manufacturer	Part #	Datasheet	Description
WOLFSPEED, INC.	GTVA262711FA-V2-R0	594Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 – 2690 MHz Rev. 04.4, 2022-1-27

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Similar Description - GTVA262711FA-V2-R0

Manufacturer	Part #	Datasheet	Description
Cree, Inc	GTVA261701FA	591Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 ??2690 MHz
	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
	GTVA261802FC	495Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz
	GTVA262701FA	489Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTVA261701FA-V1	750Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Rev. 05.1, 2022-1-27
	GTVA262701FA_V2	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTVA261802FC	536Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27
	GTVA262701FA	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTVA262711FA	594Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 – 2690 MHz Rev. 04.4, 2022-1-27
	GTVA263202FC	632Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz Rev. 04.1, 2022-1-27

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GTVA262711FA-V2-R0 Datasheet(PDF) 1 Page - Cree, Inc

GTVA262711FA-V2-R0 Datasheet(HTML) 1 Page - Cree, Inc

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