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U4221B Datasheet(PDF) 6 Page - TEMIC Semiconductors |
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U4221B Datasheet(HTML) 6 Page - TEMIC Semiconductors |
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6 / 12 page ![]() U4221B TELEFUNKEN Semiconductors Rev. A1, 15-May-96 Preliminary Information 6 (12) Electrical Characteristics Parameters Test Conditions / Pins Symbol Min. Typ. Max. Unit FIELD STRENGTH INDICATION; FSI Pin 12 Output voltage HIGH LOW RLOAD = 13 M W to GND RLOAD = 2.6 M W to VCCD VCC–0.4 0.4 V Output current HIGH LOW VTCO = VCCD/2 VTCO = VCCD/2 0.2 1.0 0.4 4.0 mA mA FIELD STRENGTH SELECT; FSS Pin 11 Input voltage HIGH LOW Generator output resistance v 200 kW VCC–0.4 0.4 V V Test Circuit for DCF 1 2 3 4 5 6 7 89 10 11 12 13 14 15 16 U 4221 B Measurement point 100 n 50 k 50 50 77,5 kHz Generator 220 n 47 n 77.5 kHz (with variable output level) Electronic switch (Time Code) T 1 s Measuring device: Oscilloscope with high impedance w VCCD–0.8 V Receiver input signal calibration: Example: 2 m Veff input signal ⇒ 2 2 2 103 = 5.65 mVpp at measurement point +VCC PON TCO It must be noted: Input is shortened by 50 W, that means, the antenna noise is not taken into consideration. Modulation depth adjustment by potentiometer (carrier reduced to 25%) 100 W 93 7719 e T = 100 ms (binary “0”) or 200 ms (binary “1”) probe (w 20 MW) |
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