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TIP112 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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TIP112 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page  2013. 10. 14 1/2 Revision No : 0 SEMICONDUCTOR TECHNICAL DATA TIP112 DIM MILLIMETERS TO-220 A B C D E F H J N O 0.8 ± 0.1 2.7 ± 0.2 2.54 ± 0.2 13.6 ± 0.2 3.8 ± 0.2 10.15 ± 0.15 4.5 ± 0.2 2.7 ± 0.2 15.30 MAX 1.3 0.1/-0.15 0.4 ± 0.15 A F B J E O C H N N D P P 1 BASE 2 COLLECTOR 3 EMITTER 1 2 3 TIP112 DARLINGTON TRANSISTOR (NPN) FEATURES High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector Power Dissipation 2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10mA,IE 0 0 1 0 = V Collector-emitter breakdown voltage V(BR)CEO IC=30mA,IB=0 (SUS) 100 V Emitter-base breakdown voltage V(BR)EBO IE=10mA,IC 5 0 = V Collector cut-off current ICEO VCE=50V,IB 0 = 2 mA Collector cut-off current ICBO VCB=100V,IE 0 = 1 mA Emitter cut-off current IEBO VEB=5V,IC 0 = 2 mA hFE(1) VCE=4V,IC=1A 1000 DC current gain hFE(2) VCE=4V,IC=2A 500 Collector-emitter saturation voltage VCE(sat) IC=2A,IB A m 8 = 2.5 V Base-emitter voltage VBE VCE=4V,IC A 2 = 2.8 V Collector output capacitance Cob VCB=10V,IE=0,f=0.1MHz 100 pF |
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