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2SD1691TF Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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2SD1691TF Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 3 page  2SD1691TF Silicon NPN Power Transistor www.pingjingsemi.com Revision:1.0 Sept-2018 1 / 3 Features ⚫ Low Collector-Emitter Saturation Voltage and Large Collector Current ⚫ High Power Dissipation 1：Base 2：Collector 3：Emitter 1B Absolute Maximum Ratings (Ta=25 ℃unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 7 V Collector Current-Continuous IC 5 A Total Power Dissipation Ta=25 ℃ PC 2 W Tc=25 ℃ 23 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55～150 ℃ 2C 3E TO-220F * * D1691 2 1 3 Marking D1691：Product Type * * ： Date of Manufacture |
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