12N10G-S08-R datasheet(3/6 Pages) DOINGTER

Part #	12N10G-S08-R

Description	N-Channel MOSFET uses advanced trench technology

PDF	6 Pages

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Manufacturer	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.doingter.cn/

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VSD

Source-Drain Diode Forward Voltage

VGS=0V,IS=2A,TJ=25℃

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1.2

Trr

Reverse Recovery TimeI

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Qrr

Reverse Recovery Charge

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Notes:

Typical Characteristics： (T

C=25℃ unless otherwise noted)

dI/dt=100A/µs

S=3A, VGS=0V

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Surface mounted on 1 in

2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

V DS , Drain-to-Source Voltage (V)

T A =25

o C

10V

8.0V

6.0V

5.0V

4.0V

V G = 3.0V

024

V DS , Drain-to-Source Voltage (V)

10V

8.0V

6.0V

5.0V

4.0V

V G = 3.0V

T A = 150

o C

110

114

118

122

126

130

246

V GS , Gate-to-Source Voltage (V)

I D =2A

T A =25

o C

0.4

0.8

1.2

1.6

2.0

2.4

2.8

-100

-50

100

150

T j , Junction Temperature (

o C)

I D =3 A

V G =10V

12N10G-S08-R

12N10G-S08-R Datasheet(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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