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12N10G-S08-R Datasheet(PDF) 5 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # 12N10G-S08-R
Description  N-Channel MOSFET uses advanced trench technology
PDF  6 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

12N10G-S08-R Datasheet(HTML) 5 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  12N10G-S08-R Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 12N10G-S08-R Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 12N10G-S08-R Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 12N10G-S08-R Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 12N10G-S08-R Datasheet HTML 5Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 12N10G-S08-R Datasheet HTML 6Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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5 —
Fig 11. Transfer Characteristics
Fig 12. Drain Current v.s. Ambient
Temperature
0
5
10
15
20
01
234
56
V GS , Gate-to-Source Voltage (V)
T j =150
o C
T j =25
o C
V DS =5V
0
1
2
3
4
25
50
75
100
125
150
T A , Ambient Temperature (
o C )
Fig 13. Normalized BV
DSS v.s. Junction
Fig 14. Total Power Dissipation
Temperature
Fig 15. Typ. Drain-Source on State
Resistance
0
0.8
1.6
2.4
3.2
0
50
100
150
T A , Ambient Temperature(
o C)
0
0.4
0.8
1.2
1.6
2
-100
-50
0
50
100
150
T j , Junction Temperature (
o C)
I D =1mA
100
120
140
160
180
200
036
9
12
I D , Drain Current (A)
T j =25
o C
4.5V
V GS =10V
.
12N10G-S08-R



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