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STM32H723VG Datasheet(PDF) 34 Page - STMicroelectronics |
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STM32H723VG Datasheet(HTML) 34 Page - STMicroelectronics |
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34 / 227 page ![]() Functional overview STM32H723xE/G 34/227 DS13313 Rev 2 3.22 VBAT operation The VBAT power domain contains the RTC, the backup registers and the backup SRAM. To optimize battery duration, this power domain is supplied by VDD when available or by the voltage applied on VBAT pin (when VDD supply is not present). VBAT power is switched when the PDR detects that VDD dropped below the PDR level. The voltage on the VBAT pin could be provided by an external battery, a supercapacitor or directly by VDD, in which case, the VBAT mode is not functional. VBAT operation is activated when VDD is not present. The VBAT pin supplies the RTC, the backup registers and the backup SRAM. Note: When the microcontroller is supplied from VBAT, external interrupts and RTC alarm/events do not exit it from VBAT operation. When PDR_ON pin is connected to VSS (Internal Reset OFF), the VBAT functionality is no more available and VBAT pin should be connected to VDD. 3.23 Digital-to-analog converters (DAC) The two 12-bit buffered DAC channels can be used to convert two digital signals into two analog voltage signal outputs. This dual digital Interface supports the following features: • two DAC converters: one for each output channel • 8-bit or 12-bit monotonic output • left or right data alignment in 12-bit mode • synchronized update capability • noise-wave generation • triangular-wave generation • dual DAC channel independent or simultaneous conversions • DMA capability for each channel including DMA underrun error detection • external triggers for conversion • input voltage reference VREF+ or internal VREFBUF reference. The DAC channels are triggered through the timer update outputs that are also connected to different DMA streams. |
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