STD70NH02L datasheet(4/16 Pages) STMICROELECTRONICS

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Electrical characteristics

STD70NH02L - STD70NH02L-1

4/16

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 25mA, VGS =0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 20V

VDS = 20V, TC = 125°C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

1.8

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 30A

VGS = 5V, ID = 15A

0.0062

0.008

0.014

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Forward

transconductance

VDS = 10V, ID = 18A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

2050

545

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 10V, ID = 40A

RG =4.7Ω VGS = 4.5V

(see Figure 13)

200

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 5V, ID = 60A,

VGS = 10V, RG =4.7Ω

(see Figure 14)

7.7

3.5

Qoss

(2)

Qoss.= Coss * ∆ Vin, Coss = Cgd + Cgd. See Chapter 4: Appendix A

Output charge

VDS =10V, VGS =0V

Gate input resistance

f=1MHz Gate DC

Bias =0 Test Signal

Level =20mV

Open Drain

Ω

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