ART35FE datasheet(4/19 Pages) AMPLEON

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ART35FE

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Product data sheet

Rev. 1 — 7 December 2020

4 of 19

ART35FE

Power LDMOS transistor

Characteristics

Table 6.

DC characteristics

Tj = 25 C; unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 0.3 mA

203

209

VGS(th)

gate-source threshold voltage

VDS = 20 V; ID = 30 mA

1.5

2.1

2.5

IDSS

drain leakage current

VGS =0V; VDS =65 V

1.2

A

IDSX

drain cut-off current

VGS =VGS(th) + 3.75 V;

VDS =20V

-4.6

IGSS

gate leakage current

VGS =11V; VDS = 0 V

120

RDS(on)

drain-source on-state resistance

VGS =VGS(th) + 3.75 V;

ID =1.05A

-1.6



Table 7.

AC characteristics

Tj = 25 C; unless otherwise specified.

Symbol

Parameter

Conditions

Min Typ

Max Unit

Crs

feedback capacitance

VGS =0V; VDS = 65 V; f = 1 MHz

0.087 -

Ciss

input capacitance

VGS =0V; VDS =65 V; f=1MHz

48.39 -

Coss

output capacitance

VGS =0V; VDS =65 V; f=1MHz

14.22 -

VGS =0V; f = 1 MHz

Fig 2.

Output capacitance as a function of drain-source voltage; typical values

Table 8.

RF characteristics

Test signal: CW pulsed; tp =100 s;  = 10 %; f = 108 MHz; RF performance at VDS =65V;

IDq =20mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

power gain

PL = 35 W

RLin

input return loss

PL = 35 W

24

9dB



drain efficiency

PL = 35 W

70.5

amp01523

100

VDS (V)

Coss

oss

Coss

(pF)

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